Harm C.M. Knoops

Harm C.M. Knoops is a part-time Assistant Professor at Eindhoven University of Technology (TU/e) in the Department of Applied Physics, Plasma & Materials Processing. Concurrently, he serves as an Atomic Scale Segment Specialist for Oxford Instruments Plasma Technology (OIPT). His career bridges fundamental research in atomic layer deposition (ALD) with industrial applications, focusing on plasma-based synthesis of thin films, 2D materials, and atomic layer etching.

• Academic Background: PhD in Applied Physics (2011, TU/e), thesis on ALD for 3D-integrated micro-batteries.
• External Position: Atomic Scale Segment Specialist at OIPT since 2014.

Research Interests: Knoops specializes in plasma-assisted atomic layer deposition (ALD), with a focus on improving silicon nitride ALD and understanding redeposition effects. His work addresses advanced diagnostics, RF substrate biasing, and growth of 2D-MoS₂ films. These efforts contribute to nanodevice fabrication and industrial applications in semiconductor processing.

Scientific Contributions: With 40 peer-reviewed publications (9 first-author, including a review) and an h-index of 22, his research spans conformality modeling, plasma diagnostics, and sustainable materials processing. Highlights include the 2022 Best ALD Paper Award.

Collaboration: Active in interdisciplinary projects, including datasets for isotropic atomic layer etching of GaN (2023) and contributions to courses in plasma processing science since 2017.