Toshiki Makimoto

Dr. Toshiki Makimoto is a Professor at Waseda University's School of Advanced Science and Engineering, where he has been serving since April 2013. His academic career spans several decades with significant contributions to semiconductor research, particularly in nitride semiconductors and related device technologies. Before joining Waseda University, he held leadership positions at NTT Basic Research Laboratories, including Director from July 2011 to March 2013 and Head of the Department of Functional Materials Science from October 2010 to June 2011.

Dr. Makimoto earned his Dr.Eng degree from the University of Tokyo, where he also completed both his undergraduate (1983) and graduate (1985) studies in Electrical Engineering. His educational background provided the foundation for his extensive research career in semiconductor materials and devices.

His research focuses on III-V compound semiconductors, nitride semiconductors, crystal growth, and semiconductor devices. Makimoto's work has particularly advanced the understanding of dilute nitride semiconductors like GaAsN, AlGaN/GaN heterostructures, and related device applications including high-electron-mobility transistors (HEMTs) and solar cells. His expertise spans from fundamental material properties to practical device implementation.

Analysis of his recent publications reveals a consistent focus on nitride semiconductor technologies, with particular emphasis on material characterization, defect analysis, and innovative device architectures. His work demonstrates strong continuity in semiconductor physics while adapting to emerging challenges in device performance, thermal management, and novel material systems. The research spans fundamental physics of semiconductors to practical device applications.

• MEXT Minister's Award for Science and Technology (Research Category, April 2015)
• Fellow of the Japan Society of Applied Physics (September 2014)

Dr. Makimoto has made significant contributions to semiconductor research through his leadership roles at both Waseda University and NTT Basic Research Laboratories. His work on hexagonal boron nitride as a release layer for mechanical transfer of GaN-based devices represents a notable innovation in semiconductor technology. He maintains active research collaborations and has contributed to advancing the field of nitride semiconductors through both fundamental research and practical applications.

His laboratory focuses on advanced semiconductor materials, particularly nitride-based systems, with research spanning from crystal growth techniques to device fabrication and characterization. The work integrates materials science, solid-state physics, and electrical engineering to address challenges in next-generation semiconductor technologies.