معرفی
Vanya Darakchieva is a Professor and Head of the Semiconductor Materials (HALV) unit at Linköping University's Department of Physics, Chemistry and Biology (IFM). Her research focuses on semiconductor materials for high-frequency and power electronics, with expertise in III-nitrides (GaN, AlN), silicon carbide (SiC), and graphene. She leads projects on sustainable semiconductors funded by the Wallenberg Initiative for Materials Science (WISE) and utilizes advanced terahertz spectroscopy for materials characterization.
Research Interests: Her work spans semiconductor device physics, terahertz optical Hall effect for carrier dynamics, epitaxial growth of wide-bandgap materials, and the development of energy-efficient electronics. Key areas include:
- GaN-based HEMTs for RF/power applications
- Defect engineering in SiC and AlGaN
- Terahertz spectroscopy of magnetic and polar materials
- Sustainable semiconductor design
Publications (2024–2025): Recent articles emphasize GaN device reliability, terahertz characterization techniques, and interface engineering. Trends include cryogenic trapping effects in HEMTs, spectroscopic ellipsometry advancements, and novel heterojunctions for energy applications. Over 70% of her 2025 publications involve experimental validation of semiconductor properties under extreme conditions.
Infrastructure & Leadership: She oversees the Terahertz Materials Analysis Center (THeMAC), housing Europe's only THz frequency-domain ellipsometer. Her unit collaborates globally on projects such as vertical GaN FinFETs and AlScN/GaN heterostructures.
