Niklas Rorsman

Niklas Rorsman is a Research Professor at the Microwave Electronics group, part of the Department of Microtechnology and Nanoscience at Chalmers University of Technology. His work focuses on advanced semiconductor devices, particularly gallium nitride (GaN) and silicon carbide (SiC) high-electron-mobility transistors (HEMTs) for microwave and cryogenic applications.

• Expertise: Semiconductor device physics, microwave electronics, cryogenic transistor characterization
• Key Technologies: GaN HEMTs, SiC MESFETs, graphene FETs

Rorsman's research investigates trapping effects, thermal management, and material optimization in GaN/SiC devices. Recent studies explore field plates for cryogenic stability, recessed ohmic contacts, and high-κ dielectric interfaces. His publications demonstrate a focus on improving device linearity, noise performance, and reliability through structural and process innovations.

Selected trends in his work include:

• Cryogenic GaN HEMTs with superconducting Nb gates
• Buffer-free AlGaN/GaN heterostructures for high breakdown voltage
• Graphene integration for millimeter-wave communication systems
• Advanced SiNx passivation and gate stack engineering

Contact: niklas.rorsman@chalmers.se