معرفی
Prof. Dr. Donat Josef As is a Professor in the Department of Physics at the University of Paderborn’s Faculty of Science, leading the Optoelectronic Semiconductors group focused on Group III-Nitrides (GaN, AlN, InN). He is a member of the Center for Optoelectronics and Photonics (CeOPP) and heads the research area Optoelectronic Materials and Devices.
- Research Focus: Fabrication and characterization of cubic III-nitride semiconductors via molecular beam epitaxy (MBE), enabling advanced optoelectronic devices (e.g., field-effect transistors, quantum dot emitters, THz detectors).
- Notable Achievements: Developed the first field-effect transistor using cubic AlGaN/GaN and demonstrated single-photon emissions from cubic quantum dots up to 200 K.
His recent projects include TRR 142 (Tailored Nonlinear Photonics) and ultrafast acoustics for light emission modulation. He has received an ERC grant for his groundbreaking work. His research intersects semiconductor physics, nanotechnology, and quantum photonics.
- Key Publications: Investigated dielectric properties of cubic GaN, remote epitaxy of nitrides on graphene-covered substrates, and many-body optical effects in AlGaN alloys.
Prof. As teaches courses including Materials Physics and Analysis, Lab Project, and Halbleiterepitaxie (semiconductor epitaxy). His lab explores device structures for extreme environments and high-frequency applications.
