Eleftherios Iliopoulos

Eleftherios Iliopoulos is an Associate Professor at the Department of Physics, University of Crete, and a contracted associate researcher at the Institute of Electrical and Electronic Engineering (IHE-FORTH). His career began with a B.A. in Physics from the University of Athens (1994) and a PhD from Boston University (2002), focusing on epitaxial growth of semiconductor alloys. He joined the University of Crete as a visiting assistant professor in 2005 and became an Associate Professor in 2017.

His research centers on III-Nitride semiconductors (AlN, GaN, InN), their heterostructures, and nanostructures. Key interests include epitaxial growth kinetics, material properties, and applications in electronics, optoelectronics, and quantum devices. Collaborations with industry include EADS, Aixtron, and Lockheed-Martin, focusing on III-N-based devices.

His work spans over 50 publications since 2000, emphasizing semiconductor growth dynamics, optical properties, and device engineering. Notable contributions include studies on InGaN alloy composition effects, GaN-based sensors, and quantum dot memory applications. He has co-authored articles on topics like polarization-engineered solar cells and strain relaxation in semiconductor epilayers.

He participates in research centers like the Institute of Theoretical and Computational Physics and the Cretan Center for Theoretical Physics. His labs focus on nanomaterials, quantum structures, and hybrid optoelectronics.