Georgakilas Alexandros

Georgakilas Alexandros is a Professor in the Department of Physics at the University of Crete, where he has been since 1995. His research focuses on applied physics and materials science, particularly III-V semiconductor heterostructures and nanostructures for advanced electronic and optoelectronic devices. He has contributed to understanding material properties, structural-electronic correlations, and device integration.

Research Interests: Molecular Beam Epitaxy (MBE) of III-V semiconductors, GaN-based heterostructures on Si and diamond substrates, quantum wells, nanowires, and their applications in high-electron mobility transistors (HEMTs), power electronics, and optoelectronics. His work also investigates defect analysis, strain effects, and polarization-dependent properties.

Articles Trends: His publications emphasize semiconductor device modeling, GaN/InN-based heterostructures, nanostructure fabrication, and material characterization under stress. Key themes include defect impact on mobility, integration challenges, and quantum confinement effects.

Education:

• B.A. in Physics (1984), University of Patras
• Ph.D. in Physics (1990), University of Crete (research on III-V semiconductors at Thomson-CSF/LCR and EKEK/IHDL)

Career:

• 1984-1995: Research Assistant/Contract Researcher at FORTH-IEL
• 1987: Thomson-CSF, Paris
• 1991-1992: University of Maryland, USA
• 1995: Assistant Professor, University of Crete
• 2002: Associate Professor
• 2010: Professor
• 2019-2023: Chair of the Department of Physics