Nathalie Labat

Nathalie Labat is a Professor at the University of Bordeaux, affiliated with IMS (Laboratory of Integration, Material to System). She leads research in the RELIABILITY group within the Department of Electrical Engineering, specifically focusing on the WBG (Wide Band Gap) team that investigates gallium nitride (GaN) and aluminum nitride (AlN) based high electron mobility transistors (HEMTs).

Her research spans Wide Band Gap Semiconductors, High Electron Mobility Transistors, Device Reliability, and Failure Analysis. Dr. Labat's work addresses critical challenges in GaN technology, including threshold voltage stability, thermal management, device integration techniques, and reliability assessment methodologies. Her research combines physical modeling with experimental validation to understand degradation mechanisms in semiconductor devices operating under high-power and high-frequency conditions.

Analysis of her publication record (2021-2025) reveals consistent contributions to advancing GaN HEMT technology, with particular emphasis on co-integration of enhancement/depletion mode devices, RF robustness enhancement, and millimeter-wave applications. Her work often appears in Microelectronics Reliability, where she has also served as editor for ESREF symposium proceedings.

Dr. Labat actively collaborates with industry partners including STMicroelectronics, Thales, NXP, and CEA Leti, ensuring her research addresses practical challenges in power electronics and RF applications. Her leadership in the RELIABILITY group positions her at the forefront of developing next-generation semiconductor solutions for power conversion systems and telecommunications infrastructure.