Nathalie Malbert

Nathalie Malbert is a Professor at the Institute of Microelectronics and Spectrométrie (IMS) within the University of Bordeaux, France. She leads research activities in the RELIABILITY research group, specifically within the RIAD and WBG teams. Her work focuses on semiconductor device reliability, particularly gallium nitride (GaN) high electron mobility transistors (HEMTs), electronic packaging, and failure analysis mechanisms.

Her research interests span semiconductor reliability engineering, GaN device physics, failure mechanisms in electronic components, thermal management, and packaging technologies. Malbert's work addresses critical challenges in power electronics and RF applications, with particular emphasis on AlN/GaN heterostructures, device characterization under stress conditions, and reliability assessment methodologies for next-generation semiconductor technologies.

Analysis of Malbert's publication record reveals a strong focus on GaN HEMT reliability across multiple dimensions - electrical, thermal, and mechanical. Her recent work shows increasing attention to mmWave applications, normally-off device technologies, and advanced characterization techniques for failure analysis. She frequently collaborates with industrial partners including STMicroelectronics, Thales, and STellantis.

Professor Malbert actively supervises research projects and collaborates with numerous PhD students and postdoctoral researchers, though specific names aren't detailed in the provided materials. Her work has been supported by collaborations with major industrial players in the semiconductor and electronics sectors.

She maintains strong connections with the RIAD and WBG research teams at IMS Bordeaux, focusing on reliability assessment methodologies, failure physics, and advanced characterization techniques for semiconductor devices. Her laboratory work integrates both experimental and modeling approaches to address complex reliability challenges in modern electronic systems.