Loic Theolier

Loic Theolier is an Associate Professor at University of Bordeaux specializing in microelectronics reliability within the IMS Bordeaux research laboratory (Laboratoire de l'intégration, du matériau au système). He is affiliated with the College of Science and Technology's Department of Electrical Engineering, where he leads research in the RELIABILITY group with specific team assignments to RIAD and WBG. His work focuses on the reliability of power semiconductor devices, particularly addressing failure mechanisms under various stress conditions.

Dr. Theolier's research interests center on microelectronics reliability, power electronics, and semiconductor device physics. His work examines aging mechanisms in power devices, mechanical stress analysis during operation, and thermal management challenges in high-power applications. He has developed expertise in electro-thermo-mechanical modeling of SiC MOSFET transistors, Deep Trench Termination diodes, and GaN-based high-electron-mobility transistors (HEMTs), with particular attention to short-circuit events and high-temperature operation. His research combines experimental characterization with advanced numerical simulation techniques to predict device failure and improve reliability.

Analysis of his publication record reveals a strong focus on reliability challenges in next-generation power semiconductors, with recent work examining SiC MOSFETs under short-circuit conditions, high-temperature reliability testing of GaN devices, and innovative approaches to high-voltage termination structures. His research spans both fundamental device physics and practical engineering applications, with increasing attention to aerospace and automotive power electronics requirements.

Dr. Theolier has contributed to educational initiatives in engineering pedagogy, including peer tutoring programs for first-year students and laboratory-based research initiation projects for microelectronics students. His work demonstrates a commitment to both advancing reliability science and developing effective teaching methods in electrical engineering education.

He is actively involved in the RIAD and WBG research teams at IMS Bordeaux, collaborating with multiple institutions including CNRS and Institut Polytechnique de Bordeaux. His laboratory work focuses on accelerated aging tests, mechanical stress characterization, and failure analysis of power electronic components using advanced simulation and experimental techniques.