Hamid Amini Moghadam

Hamid Amini Moghadam is a Lecturer at the Queensland University of Technology (QUT), affiliated with the School of Electrical Engineering & Robotics in the Faculty of Engineering. His research focuses on semiconductor devices, particularly SiC MOSFETs and GaN HEMTs, emphasizing their performance, degradation mechanisms, and applications in power electronics. He also explores educational methods for electronic prototyping and manufacturing processes.

His work includes analyzing near-interface traps in SiC MOSFETs, comparing commercial devices like planar and trench architectures, and developing models for GaN HEMTs in SPICE simulations. Collaborations with researchers like S. Dimitrijev and P. Pande highlight his contributions to semiconductor physics and power electronics. While his publications span 2020–2024, no specific scientific awards are listed.

Hamid’s research trends emphasize advancing power device reliability, optimizing material efficiency, and addressing challenges in high-temperature and high-power applications. His publications consistently address semiconductor characterization, trap analysis, and applications in energy-efficient systems.