Jens Tomm

Dr. Jens Tomm is a Senior Researcher at the Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy (MBI), where he has been since 1995. His work focuses on high-power semiconductor lasers, optoelectronic device limitations, and material characterization. He collaborates with industry partners like Osram and Lumentum, studying GaN-based devices and degradation mechanisms. Key projects include analyzing catastrophic optical damage, carrier dynamics in quantum wells, and luminescence properties of materials like ZnSe and MgAl2O4.

Education: PhD in Physics (1984, Humboldt University), Diplom (1982). Previous roles include visiting professorships at Georgia Tech (1993–1995) and RIKEN (1999). Author of books on optoelectronic semiconductors and quantum-well laser packaging. His research spans semiconductor materials science, laser physics, and device reliability. Recent work emphasizes UV LEDs, infrared solid-state lasers, and nanoscale heterostructures.

• Key Projects: Catastrophic optical damage analysis, GaN-based laser reliability, quantum well recombination studies.
• Collaborations: BMBF projects (e.g., BlauLas), industry partnerships with Osram, Dilas, and Lumentum.
• Techniques: Photoluminescence, transient spectroscopy, cathodoluminescence, Raman spectroscopy.

Publications focus on semiconductor laser physics, material degradation, and optoelectronic device optimization. Over 100+ peer-reviewed articles and two Springer/McGraw-Hill books highlight his contributions to the field.