Jean-Pierre Landesman

Jean-Pierre Landesman serves as an Adjunct Professor in the Department of Engineering Physics at McMaster University, with scholarly activity spanning over 30 years and recent publications extending to 2025. His work centers on semiconductor device physics, specifically III-V materials systems including InP and GaAs, with emphasis on experimental characterization of fabrication-induced mechanical effects.

Landesman's research interests focus on semiconductor stress phenomena, optoelectronic device reliability, and photonic materials engineering. He specializes in spatially-resolved luminescence techniques (micro-photoluminescence, cathodoluminescence) to quantify mechanical strain in laser diodes and quantum well structures. Key areas include plasma etching damage analysis, silicon nitride film property optimization for photonics, and automotive-grade component qualification under high-temperature stress.

Analysis of his 2021-2025 publications reveals consistent expertise in correlating mechanical stress with optical properties in III-V devices. He frequently employs finite element simulations (FEM) to model strain distributions from dielectric films and etching processes, publishing in journals like Journal of Vacuum Science and Technology, Applied Optics, and ECS Meeting Abstracts. His work bridges semiconductor processing, materials characterization, and device performance validation.

No scientific awards or honors were documented in the provided text.

Landesman instructs the graduate course ENGPHYS 723 (Semiconductor Diode Laser Physics) in 2025, 2024, 2022, and 2019. While his publication record indicates active research collaboration, the text lacks specifics about PhD/Master's students, grant funding, or project leadership. Automotive reliability studies suggest industry partnerships, but no funding sources are named.

The provided information does not reference any dedicated laboratory, research team, or institutional facilities under his direct leadership.