Rinat Yapparov

Rinat Yapparov is a researcher at KTH Royal Institute of Technology, affiliated with the Department of Physics. He holds an MSc in Physics of Metals from National Research Nuclear University MEPhI (Moscow) and a PhD in Physics (Optics and Photonics) from KTH. His work focuses on semiconductor materials, optoelectronic devices, and quantum well engineering. He currently assists in the Elementary Physics course (SK1151) at KTH.

Research interests include carrier dynamics in InGaN/GaN quantum wells, V-defect mediated injection mechanisms, and optimization of LED efficiency through quantum barrier engineering. His studies apply techniques like near-field optical microscopy, photoluminescence spectroscopy, and electrochemical analysis to understand defect effects and interwell transport phenomena.

His recent publications (2020-2025) highlight advancements in GaN-based LEDs, including volumetric carrier injection, hole transport via defects, and interwell carrier dynamics. These contributions aim to improve optoelectronic device performance in long-wavelength and color-tunable applications.