Jung Han

Jung Han is the William A. Norton Professor of Electrical & Computer Engineering at Yale University, affiliated with the School of Engineering & Applied Science. He holds a Ph.D. from Purdue University and leads the Optoelectronics Materials and Devices Group, focusing on interdisciplinary research in III-nitride semiconductors, optoelectronics, and power electronics. His work bridges fundamental materials science with practical applications in solid-state lighting, energy harvesting, and next-generation electronics.

Research interests include wide-bandgap semiconductor materials (e.g., GaN), nanoscale device fabrication, and epitaxial growth techniques. He pioneered nanoporous GaN distributed Bragg reflectors (DBRs) for high-efficiency LEDs and lasers, as well as selective-area growth methods for power electronics. His lab explores green energy technologies, flexible electronics, and hybrid organic-inorganic semiconductors.

Publications emphasize advancements in GaN-based vertical-cavity surface-emitting lasers (VCSELs), SWIR detectors, and micro-LED displays. Recent work addresses challenges in defect control, scalability of III-nitride devices, and integration with emerging materials. His group collaborates across engineering, applied physics, and chemistry to advance sustainable energy and high-performance optoelectronics.

Notable contributions include wafer-level integrated white-LEDs with quantum dots, damage-free in-situ GaN etching via TBCl, and stacking-fault-free GaN growth on foreign substrates. His research has been recognized in high-impact journals like Advanced Materials and Applied Physics Letters.