Daniel Feezell

Daniel Feezell is an Associate Professor in the Electrical and Computer Engineering Department at the University of New Mexico (UNM), where he directs the III-nitride Materials and Devices group at the Center for High Technology Materials (CHTM). His research focuses on advanced semiconductor materials and devices, particularly III-nitride based technologies for solid-state lighting, communications, and power applications.

Education:

• Ph.D. in Electrical Engineering, University of California, Santa Barbara (2005)
• M.S. in Electrical Engineering, University of California, Santa Barbara (2001)
• B.S. in Electrical Engineering, University of California, Irvine (2000)

Dr. Feezell's research program centers on the epitaxial growth, fabrication, and characterization of group III-nitride materials with emphasis on nonpolar and semipolar orientations. His work spans solid-state lighting, high-efficiency LEDs, III-nitride nanophotonics, superluminescent diodes, visible lasers, and power electronics. Prior to joining UNM, he worked with Nobel Laureate Prof. Shuji Nakamura at UCSB, where his team achieved the first demonstration of a nonpolar GaN-based VCSEL.

Analysis of his recent publications reveals a strategic focus on overcoming fundamental limitations in green and red nitride LEDs, developing high-speed optoelectronic devices, and creating novel nanophotonic structures for improved light extraction. His work increasingly integrates computational modeling with experimental approaches to address efficiency droop, color stability, and high-speed modulation challenges in semiconductor devices.

Scientific Awards:

• NSF CAREER Award (2015) for GaN-based VCSEL research
• DARPA Young Faculty Award with Director's Fellowship Extension (2013/2015)
• Japanese Journal of Applied Physics Paper Award
• UNM School of Engineering Junior Faculty Research Award (2016)
• Department of Energy Grant for smart lighting systems development

Dr. Feezell has secured significant research funding from multiple federal agencies and serves as the Sources Thrust leader in the Lighting Enabled Systems and Applications Engineering Research Center. His research group actively mentors multiple graduate students and postdoctoral researchers, with strong industry connections and numerous patentable innovations emerging from their work.

The III-nitride Materials and Devices laboratory at CHTM features state-of-the-art MOCVD crystal growth equipment, advanced nanofabrication facilities, and comprehensive optical and electrical characterization capabilities. The lab has made pioneering contributions to nonpolar semiconductor technology, including breakthroughs in high-speed LEDs and novel approaches to nanoscale selective-area epitaxy.