معرفی
Dimitrios Kazazis is a tenured scientist at the Paul Scherrer Institute (PSI) in Switzerland, affiliated with the Laboratory for X-ray Nanoscience and Technologies (LXN) since 2024. Previously, he served as a researcher and project coordinator at PSI's Laboratory for Micro- and Nanotechnology (LMN) from 2016 to 2024. He is a key member of the Advanced Lithography and Metrology group, coordinating transnational access for the NFFA-Europe Pilot project and leading EUV lithography initiatives.
His educational background includes:
- Electrical and Computer Engineering diploma (2001) from the National Technical University of Athens (NTUA)
- Sc.M. (2005) and Ph.D. (2009) from Brown University under Prof. Alex Zaslavsky
- Summer internships at IBM T.J. Watson Research Center (2006-2007)
- Postdoctoral research at the Laboratory for Photonics and Nanostructures in Paris (2009-2014)
Kazazis specializes in nanoscience and nanotechnology, with a focus on advancing electron beam lithography (EBL) and extreme UV interference lithography (EUV-IL) to fabricate 2D/3D structures for plasmonics, microfluidics, nanoelectronics, and X-ray optics. His work targets single-digit nanometer resolution for semiconductor manufacturing and quantum device applications, emphasizing metrological standards and sustainable photoresist development through the EU Resin Green consortium.
His 2023-2025 publications demonstrate concentrated expertise in EUV lithography, achieving 5nm resolution via mirror-based interference techniques, developing resistless silicon patterning methods, and optimizing molecular resists for high-NA systems. Key trends include overcoming photoresist limitations through novel chemistry, enabling large-scale quantum device fabrication, and applying nanofluidics to multiplexed medical diagnostics.
Scientific awards:
- No awards or fellowships explicitly listed in the source materials
He has supervised undergraduate and graduate students throughout his career, notably during his part-time lecturer role at Paris 7 University (2013-2016). Project leadership spans MOS transistor characterization, GeOI FETs, epitaxial growth on high-κ oxides, suspended 2DEGs for MEMS, quantum Hall effect metrology, graphene-based resistance standards, THz circuits, and achromatic Talbot lithography. Current grants include NFFA-Europe Pilot coordination and the EU Resin Green project's pattern metrology work package.
As PSI's nanofabrication expert, he coordinates advanced micro/nanofabrication activities and supervises the design of a new EUV-IL endstation for the XIL-II beamline (commissioning in 2025), which will enable single nanometer digit resolution and support hyper-NA EUV resist development for next-generation semiconductor technology nodes.
