معرفی
Dr. Daniel Haasmann is a Lecturer in the School of Engineering and Built Environment, specifically within the Electrical and Electronic Engineering department at Griffith University, Australia. He is also a member of the Queensland Quantum and Advanced Technologies Research Institute (QUATRI) since 2025 and was previously affiliated with the Queensland Micro and Nanotechnology Centre from 2017 to 2023.
Dr. Haasmann's educational background includes:
- PhD in Microelectronic Engineering from Griffith University (2015)
- B.Eng (1st Class Hons) in Microelectronic Engineering from Griffith University (2008)
With over 12 years of specialized experience in semiconductor physics, Dr. Haasmann focuses on silicon carbide power electronic devices. His research centers on wide band-gap semiconductor devices, particularly silicon carbide MOSFETs and Schottky barrier diodes. He possesses extensive expertise in gate oxides, electrical characterization of SiC MOS devices, and cleanroom fabrication techniques. His work bridges fundamental semiconductor physics with practical power electronics applications, contributing to more efficient energy conversion systems.
Analysis of Dr. Haasmann's publication record reveals a consistent research trajectory focused on silicon carbide semiconductor technology. His work spans from fundamental material science investigations of SiC interfaces to practical power conversion applications. A significant portion of his research addresses the characterization and mitigation of near-interface traps in SiC MOS devices, which is critical for improving device performance and reliability in high-power applications. His recent publications demonstrate growing collaboration networks and increasing impact in the semiconductor device community.
Dr. Haasmann has secured competitive research funding, including the 'Advanced Silicon Carbide Transistor Prototype for Highly Efficient and Reduced Cost Power Conversion Systems' grant from the Department of Education (July 2024-July 2025), part of Australia's Economic Accelerator program with a total project value of $449,204.
As an academic supervisor, Dr. Haasmann currently serves as Principal Supervisor for research on 'Surge Current Comparison of Homogeneous and Merged PiN SiC Schottky Diodes' and Associate Supervisor for 'Development of SiC MOSFET with enhanced mobility for high power and high frequency switching applications.' He previously supervised Mayank Chaturvedi's doctoral research on 'Characterization of Active Near Interface Traps in 4H-SiC MOS Devices.'
Dr. Haasmann is actively involved with QUATRI and contributes to Griffith University's research initiatives aligned with Sustainable Development Goal 3 (Good Health and Well Being), particularly through applications in biomedical therapy using silicon carbide electronics.
