معرفی
Dallas Morisette is a Research Professor of Electrical and Computer Engineering at Purdue University, affiliated with the Birck Nanotechnology Center. His primary research focuses on solid-state device physics, MOS interface phenomena, wide bandgap materials, and power semiconductor devices, particularly silicon carbide (SiC) technologies. He holds a BS from Walla Walla College (1993), and both MS (1997) and PhD (2001) degrees from Purdue University.
His work emphasizes advancing power device performance through innovations in materials, fabrication techniques, and device architecture. Notable contributions include the development of ultra-short-channel SiC MOSFETs, self-aligned trench structures, and the waffle substrate approach for reduced substrate resistance. His research bridges fundamental material science with applied engineering solutions for high-power electronics.
Publications span over two decades, with recent emphasis on interface trap analysis, high-mobility SiC devices, and robust power electronics. These studies address challenges in device reliability, scalability, and energy efficiency. His work is supported by collaborations within Purdue’s College of Engineering and the Birck Center.
