معرفی
Prof. Ulrike Grossner holds the position of Full Professor at the Department of Information Technology and Electrical Engineering at ETH Zürich. Her research focuses on semiconductor materials, particularly silicon carbide (SiC) devices, with an emphasis on radiation effects, power electronics reliability, and device simulation. She leads investigations into radiation-induced defects in SiC MOSFETs, interface properties of oxide-semiconductor systems, and advanced modeling techniques for power electronic systems. Her work bridges fundamental materials science with practical applications in high-power devices and aerospace electronics.
Prof. Grossner’s contributions include developing methods for defect characterization in SiC materials and pioneering surface partial element equivalent circuit (S-PEEC) methods for electromagnetic analysis. Her research group collaborates on projects involving neutron and proton irradiation effects, thermal oxidation processes, and device-circuit co-simulation for optimizing power systems.
Publications highlight her expertise in SiC MOSFET reliability under extreme conditions, such as single-event burnout sensitivity and total ionizing dose tolerance. She has authored over 30 articles in 2023-2025 alone, addressing topics from defect profiling via muon spectroscopy to gate impedance analysis. Her work is frequently presented at conferences like the International Conference on Silicon Carbide and Related Materials (ICSCRM).
