معرفی
Michel Nagel is a Lecturer at the Department of Information Technology and Electrical Engineering at ETH Zürich. His research focuses on power semiconductor devices, particularly silicon carbide (SiC) MOSFETs, with an emphasis on dynamic electrical characteristics, circuit modeling, and layout optimization. Key areas include gate resistance behavior, parallel device stability, and electrothermal modeling.
His work addresses challenges in high-frequency switching, parasitic effects in power electronics, and virtual prototyping for reliable PCB designs. Recent contributions include studies on SiC MOSFET internal gate resistance dynamics and the role of layout parasitics in switching performance.
Research interests span semiconductor device physics, power electronics system design, and modeling techniques. He collaborates on topics such as thermal management of power modules and stability analysis of parallel device configurations.
