Danial Bavi

Danial Bavi is a Researcher affiliated with the School of Engineering and Faculty of Science and Engineering at Macquarie University. He holds a Doctor of Philosophy (PhD) and focuses on semiconductor device modeling, particularly in high electron mobility transistors (HEMTs), silicon carbide (SiC) MOSFETs, and ESD diodes. His work integrates physics-based approaches with advanced computational techniques like neural networks.

Research Interests:

• Compact modeling of power devices
• Manufacturing variability analysis
• Artificial intelligence applications in semiconductor characterization
• Temperature-dependent behavior of SiC MOSFETs

His publications (6 total) emphasize advancements in GaN and SiC technologies, with notable contributions to ESD diode modeling and neural network-based approaches. Collaborations span international conferences like IEEE ICMTS and LAEDC. No scientific awards are explicitly mentioned.

Advising and grants remain unspecified in the provided data. His research is centered around lab-scale device characterization and compact model development without explicit mention of lab facilities or teams.