- Semiconductor Device Modeling
- Boltzmann Transport Equation
- TCAD (Technology Computer-Aided Design)
- +۱۱ مورد دیگر
Christoph Jungemann is a Professor at RWTH Aachen University in the Faculty of Electrical Engineering and Information Technology, where he serves as Vice Dean and heads the Institute for Theoretical Electrical Engineering. He obtained his diploma and doctorate in electrical engineering from RWTH Aachen and completed habilitations at the University of Bremen and TU Braunschweig. His career includes academic positions at Fujitsu in Japan, the University of Bremen, Stanford University, TU Braunschweig, and the University of the Federal Armed Forces in Munich. His research focuses on semiconductor device modeling, particularly using the Boltzmann transport equation, noise simulation, SiGe HBTs, THz devices, ReRAM, and cryogenic electronics. He employs deterministic and Monte Carlo methods for advanced TCAD applications. His recent work explores high-harmonic generation in doped silicon, plasma waves, and compact modeling of III-V devices. His publication trend shows sustained leadership in computational electronics, with emphasis on numerical stability, multi-scale modeling, and emerging device technologies for quantum and high-frequency applications. IEEE Paul Rappaport Award (2006) IEEE Fellow (2019) RWTH Teaching Award (2017) He has advised numerous researchers and co-authored extensively with colleagues in device physics and modeling. He has led major projects such as DOTSEVEN and edited special issues on next-generation TCAD. He has also served as co-editor of IEEE Transactions on Electron Devices and contributed to accreditation in engineering education through ASIIN. He leads a research group focused on theoretical electrical engineering, advancing simulation methodologies for next-generation semiconductor devices.






