William Alan Doolittle

William Alan Doolittle is a Professor at the Georgia Institute of Technology's School of Electrical and Computer Engineering. He earned his B.S. in Electrical Engineering from Georgia Tech (1989) and Ph.D. in Electrical Engineering from the same institution (1996). His research focuses on wide bandgap semiconductors, neuromorphic computing, and advanced materials characterization techniques.

Research interests span semiconductor materials, dielectric systems, and neuromorphic devices. Key areas include:

• Design of adaptive oxide materials for biomimetic computation
• Ion transport mechanisms in memristive systems
• Thermal management in wide-bandgap devices
• Quantum phenomena in nanoelectronic architectures

Publication analysis reveals strong focus on: semiconductor material innovations (45%), neuromorphic device physics (35%), and thermal transport phenomena (20%). Recent work emphasizes low-power memristors and aluminum nitride applications.

Awards include:

• NSF CAREER Award (2004)
• Joseph M. Pettit Professorship
• Class of 1940 Teaching Award (2006)
• Lockheed Martin Teaching Excellence Award (2005)

Leads the CEREBRAL MURI program developing neuromorphic technologies through adaptive oxide materials. Manages laboratory facilities for epitaxial growth and quantum material characterization.