Benjamin Max

Benjamin Max serves as a Group leader at Dresden University of Technology specializing in semiconductor processes, devices, and integration. His research focuses on resistive and ferroelectric switching effects in HfO₂/HZO-based devices, neuromorphic computing architectures, and monolithic 3D semiconductor integration. He teaches core undergraduate Electrical Engineering courses including ET1 (Basics of Electrical Engineering), ET2 (Electrical and Magnetic Fields), ET3 (Dynamic Networks), plus specialized seminars in Memory Technology and Semiconductor Technology.

His primary research domains include:

• Neuromorphic computing using HZO-based ferroelectric tunnel junctions (FTJs) for spiking neural networks (STDP, depression/potentiation)
• Memristive crossbar arrays with functionalized NbO_x/AlO_x gate oxides
• Bi-layer FTJ and RRAM/FeRAM capacitor development
• Monolithic 3D integration of IGZO-based metal oxide semiconductors
• Quantum-dot flash memory (QD-Flash) systems

Dr. Max's experimental expertise spans thin-film deposition (PVD, CVD, ALD), wet chemistry processing, lithography, and advanced electrical characterization including pulsed I-V/C-V measurements, ferroelectric hysteresis testing, and temperature-dependent transport analysis. His team employs scanning probe microscopy (AFM/PFM) for nanoscale material characterization within semiconductor device development workflows.