معرفی
Vojkan S. Davidovic is an Assistant Professor at the Department of Microelectronics and Microsystems, Faculty of Electronic Engineering in Niš, University of Niš. He holds a PhD (2010), Master's (1996), and Bachelor's (1990) in Microelectronics from the same institution. His research focuses on semiconductor device reliability, particularly power VDMOSFETs and radiation effects in microelectronics. He has authored 35+ papers with impact factor, including work on NBTI degradation mechanisms, radiation hardening techniques, and thin film transistor characterization.
Education History:
- PhD in Microelectronics, Faculty of Electronic Engineering Niš (2010)
- MSc in Microelectronics, Faculty of Electronic Engineering Niš (1996)
- BEng in Microelectronics, Faculty of Electronic Engineering Niš (1990)
His research explores Negative Bias Temperature Instability (NBTI), radiation effects in power devices, and thin film transistor reliability. Key contributions include analyzing recoverable vs permanent degradation in VDMOSFETs and developing radiation hardening strategies through electrical stressing.
Project Involvement: Currently engaged in 2 national and 1 international research projects. Active in organizing technical conferences including the IEEE MIEL conference.
Laboratory work focuses on semiconductor device testing under various stress conditions, with emphasis on failure mechanism analysis and reliability improvement techniques.