NICOLO' ZAGNI

Nicolo' Zagni is a Researcher at the Department of Engineering 'Enzo Ferrari', University of Bologna, specializing in semiconductor device physics and reliability. His research focuses on GaN-based power electronics, HEMT devices, and interface/border traps in wide-bandgap materials. He collaborates on projects involving microwave/millimeter-wave GaN HEMTs, dynamic on-resistance (RON) instability, and phase-transition switches.

Key research areas include:

• Characterization of interface and border traps in GaN MOS capacitors
• Off-state bias instabilities in GaN trench MOSFETs
• Modeling dynamic RON in p-GaN power HEMTs using 'hole virtual gate' theory
• Impact of epitaxial structure on short-channel effects in GaN HEMTs

Recent work explores carbon-doped buffers in GaN HEMTs and phase-change electronics for post-Boltzmann devices. His publications span IEEE journals and conferences, with a focus on experimental/simulation analysis of reliability and trapping mechanisms.