Nicolò Zagni

Nicolò Zagni is a Postdoc Researcher at the University of Modena and Reggio Emilia (UNIMORE), focusing on Gallium Nitride (GaN) and Ferroelectric device reliability. He earned a PhD in Information and Communication Technologies (ICT) in 2021 with a thesis on Simulation and Modeling of GaN Electronics.

His research spans power electronics, dynamic on-resistance (RON) instabilities, phase-transition logic switches, and negative capacitance transistors. He has explored GaN device degradation under OFF-state stress, hole emission from carbon traps, and ferroelectric endurance.

Key article trends include device simulation (TCAD), trap dynamics in GaN, and novel materials for RF/millimeter-wave amplifiers. Collaborations include institutions like Purdue University and studies on SiC and MoS₂ applications.