Ivan Berdalović

Ivan Berdalović is a postdoctoral researcher at the Micro- and Nanoelectronics Laboratory within the Faculty of Electrical Engineering and Computing at the University of Zagreb. He holds a PhD in Electrical Engineering from CERN, where he contributed to advanced pixel detector design for the ATLAS experiment. His expertise includes nanoelectronics, semiconductor technology, and optoelectronics. He received the Josip Lončar award during his Master's studies and the Rector's Award for best scientific paper. His current research focuses on modeling carrier transport in gallium nitride (GaN) high electron mobility transistors (HEMTs) and radiation-hard detector technologies.

Education: BSc and MSc in Electrical Engineering (University of Zagreb), followed by PhD studies at CERN. He also pursued courses in innovation management and project management (PRINCE2 certification).

Research Interests: Nanoelectronic structures, semiconductor materials, advanced detector systems, and computational modeling of electron mobility. Active participant in international conferences and co-author of numerous papers on avalanche photodiodes and pixel detector applications.