معرفی
Ishwara Bhat is a Professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer Polytechnic Institute (RPI). He earned his B.S.E.E. from the Indian Institute of Technology and M.S./Ph.D. in Electrical Engineering from RPI. His research focuses on epitaxial growth and characterization of II-VI, III-V, and IV-IV semiconductors, including wide band gap materials like GaN, SiC, and ZnSe, as well as narrow band semiconductors like HgCdTe and InGaSb. Current projects emphasize silicon carbide epitaxial films for high-power, high-temperature, and high-voltage devices, supported by collaborations with Texas Instruments.
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