معرفی
Jawad Ul-Hassan serves as an Associate Professor in the Department of Physics, Chemistry and Biology (IFM) at Linköping University's Faculty of Science and Engineering. His research is conducted within the Semiconductor Materials (HALV) group and the Unit of Wide Bandgap Semiconductors (HMWBS), focusing on advanced semiconductor materials research.
His research interests center on wide bandgap semiconductors, particularly silicon carbide (4H-SiC) materials science. Dr. Ul-Hassan investigates quantum defects in silicon carbide, epitaxial growth techniques, crystal quality optimization, and the electrical and optical properties of semiconductor materials. His work bridges fundamental physics with practical applications in quantum technologies and electronic devices.
Analysis of his recent publications reveals a strong focus on V2 defects in 4H-SiC, hydrocarbon effects on epitaxial growth, and advanced characterization of semiconductor materials. His research shows increasing collaboration with international teams and publication in high-impact journals including Nature Communications and Physical Review Applied.
