معرفی
Guofu Niu is a Professor in the Department of Electrical and Computer Engineering at Auburn University, holding the Ed and Peggy Reynolds Family endowed chair. His research specializes in semiconductor device physics, compact modeling of SiGe heterojunction bipolar transistors (HBTs), FinFETs, and cryogenic electronics for RF and power applications.
Key research areas include RF linearity characterization, avalanche effects, thermal noise, and low-temperature device performance. He has developed advanced models (e.g., Mextram) for circuit simulation tools, enhancing the accuracy of semiconductor design workflows.
Publications focus on nano-scale device reliability, tunneling currents, and optimization of RF amplifiers, with applications in 5G technology and extreme-environment electronics. Collaborative projects span industry and academia to advance semiconductor modeling frameworks.
