معرفی
Prof. Colombo R. Bolognesi is a Full Professor of Millimeter-Wave Electronics at ETH Zürich's Department of Information Technology and Electrical Engineering. He holds a PhD in Electrical Engineering from the University of California, Santa Barbara, and has held academic positions at Simon Fraser University (1995-2006) before joining ETH in 2006. His research focuses on III-V semiconductor devices, particularly InP/GaAsSb and InP/GaInAsSb double heterojunction bipolar transistors (DHBTs), with applications in millimeter-wave and terahertz electronics. His work emphasizes device physics, high-frequency performance, and optoelectronic integration, including uni-traveling carrier (UTC) photodiodes and compact modeling. He has authored over 175 publications and holds prestigious awards such as IEEE Fellow (2008) and the Frontiers in Research Award (2001).
- Education:
- Bachelor of Electrical Engineering, McGill University (1987)
- Master of Electrical Engineering, Carleton University (1989)
- PhD in Electrical Engineering, University of California, Santa Barbara (1994)
- Research Interests: Millimeter-wave transistors, semiconductor device physics, high-frequency electronics, terahertz applications, UTC photodiodes, and compact modeling.
His recent work includes record-breaking power-added efficiency (PAE) in InP/GaAsSb DHBTs at 170 GHz, advanced UTC photodiodes for 300 Gbps communications, and terahertz characterization of DHBTs. He leads a research group at ETH Zurich focused on pushing the boundaries of III-V semiconductor device performance for next-generation RF and optoelectronic systems.
Awards: IEEE Fellow (2008), IEEE Senior Member (2003), Frontiers in Research Award (2001), GaAs IC Symposium Best Paper Award (1999), IEE Electronics Letters Premium Award (1998).
Advising & Grants: While specific student names are not listed, his research involves collaboration with PhD/Master's students and postdoctoral researchers. His work is supported by grants from the Swiss National Science Foundation and industry partnerships in semiconductor technology. Key projects include developing UTC photodiodes and DHBT-based power amplifiers for 5G/6G applications.
Labs/Teams: His research is conducted within ETH Zurich's Millimeter-Wave Electronics group, leveraging state-of-the-art fabrication facilities and characterization tools for III-V semiconductor devices.
