John D. Cressler

Professor John D. Cressler is a tenured faculty member at the Georgia Institute of Technology, holding a position within the School of Electrical and Computer Engineering in the College of Engineering. His research focuses on cutting-edge semiconductor technologies, particularly silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for mixed-signal applications spanning RF, microwave, mm-wave, analog, and digital domains.

His research interests center on atomic-scale bandgap engineering for next-generation semiconductor devices, with emphasis on SiGe HBT technology development, radiation-hardened circuits for space applications, cryogenic electronics, and device-circuit interactions. His team explores fundamental device theory, broadband noise analysis, profile optimization, 2-D/3-D simulation, compact modeling, and radiation effects. Current projects include Europa-surface mission electronics, D-band/sub-THz systems, and radiation-tolerant receiver designs.

Analysis of his 15 most recent publications (2024-2025) reveals a dominant focus on radiation-hardened electronics for space applications (40% of works), millimeter-wave circuit design (30%), and SiGe HBT reliability optimization (30%). Key trends include Europa mission electronics development, D-band/sub-THz circuit innovation, and advanced radiation mitigation techniques using SiGe BiCMOS technology.

Professor Cressler teaches multiple courses including ECE 3040 (Microelectronic Circuits), ECE 3450 (Semiconductor Devices), ECE 6444 (Silicon-Based Heterostructure Devices and Circuits), and the interdisciplinary IAC 2002 course on Science, Engineering and Religion. His research is supported by industrial collaborations and Georgia Tech facilities including the Georgia Electronic Design Center (GEDC), NanoTECH, and C-STAR.