Professor Aloke Dutta is a faculty member in the Department of Electrical Engineering at Indian Institute of Technology Kanpur (IIT Kanpur). He holds a PhD in Electrical Engineering from Louisiana State University (LSU), Baton Rouge, Louisiana (1989), an MS in Electrical Engineering from LSU (1985), and a BE in Electrical Engineering from Jadavpur University (1982). Professor Dutta's research focuses on semiconductor device physics and modeling, Analog/Digital VLSI circuits, IC fabrication technology and device characterization, and Mixed Signal RF Circuits. His work bridges fundamental semiconductor physics with practical applications in integrated circuit design and fabrication. His publications demonstrate expertise in MOSFET modeling, particularly in substrate current, gate tunneling, and SOI technologies across various device structures. Professor Dutta has received numerous accolades for his teaching and research, including the Distinguished Teacher Award of IIT Kanpur (2013) and the prestigious Ranjit Singh Chair Professor position at IIT Kanpur (2012). His research publications in high-impact journals demonstrate his expertise in semiconductor device modeling, particularly in MOSFET physics and SOI technology. Distinguished Teacher Award of IIT Kanpur (2013) Ranjit Singh Chair Professor position at IIT Kanpur (2012) Best Dissertation Award by the Graduate Student Council at LSU (1989) Kaiser Fellowship for outstanding research at LSU (1986) Dr. B.C. Roy Gold Medal at Jadavpur University (1982) Professor Dutta has mentored numerous students in the field of semiconductor devices and VLSI circuits. His research has been supported by various grants that have contributed to advancements in semiconductor technology and device modeling. His work spans fundamental semiconductor physics, device modeling techniques, and practical applications in integrated circuit design. His laboratory at IIT Kanpur focuses on semiconductor device characterization and modeling, providing students with hands-on experience in cutting-edge technologies related to integrated circuit design and fabrication. The research environment supports work on MOSFET physics, SOI technologies, and quantum mechanical effects in semiconductor devices.











