معرفی
Mo Ahoujja is an Associate Professor in the Department of Physics within the College of Arts and Sciences at the University of Dayton, where he has been a full-time faculty member since 2001. He also contributes to the Premedical Programs, teaching courses that support pre-health students. His academic journey includes a Ph.D. in Physics from the University of Cincinnati (1996) and a B.A. in Physics from Kenyon College (1990).
His research centers on experimental condensed matter physics, particularly the electrical and optical properties of wide-bandgap semiconductors such as gallium nitride (GaN) and aluminum gallium nitride (AlGaN). His work involves material growth via molecular beam epitaxy (MBE) and MOCVD, doping studies, Hall effect measurements, and defect characterization in semiconductor heterostructures.
The analysis of his recent publications reveals a consistent focus on the impact of aluminum composition and silicon doping on the electronic behavior of III-nitride materials. These studies contribute to the advancement of high-electron-mobility transistors (HEMTs), optoelectronic devices, and power electronics.
Although no specific scientific awards or fellowships are listed in the provided text, his publications in reputable journals and conference proceedings indicate active scholarly engagement in the field of semiconductor physics.
Dr. Ahoujja advises students through research mentorship and teaching, particularly in physics and premedical education. While no grants are explicitly mentioned, his research trajectory suggests prior or ongoing funding support. He is affiliated with the Department of Physics and contributes to interdisciplinary education through the Premedical Programs.
He is part of the broader research ecosystem at the University of Dayton, potentially collaborating with engineering and materials science teams focused on advanced electronic materials and devices.
