معرفی
Joonas Isometsä is a Postdoctoral Researcher at Aalto University, affiliated with the Department of Electronics and Nanoengineering and the Electron Physics Group (EPG). He holds a Master's degree in Engineering and Technology from Aalto University, awarded in 2019, and completed his doctoral thesis in 2024 on reducing optical and electrical losses in germanium via nanostructures and surface passivation.
- Master's Degree, Engineering and Technology, Aalto University (2019)
- Doctoral Thesis: Reducing optical and electrical losses in germanium via nanostructures and surface passivation, Aalto University (2024)
His research centers on germanium-based optoelectronic devices, focusing on surface passivation techniques, nanostructuring to minimize optical losses, and high-efficiency infrared photodetectors. Key interests include atomic layer deposition, interface engineering, and defect control in semiconductor materials. His work bridges materials science and electronic device engineering.
The recent publications highlight a strong trend in germanium surface engineering, with emphasis on passivation methods using ALD SiO2, porous layers, and chemical treatments. Articles span nanostructuring for light absorption, interface charge control, and high-responsivity photodiodes, reflecting a cohesive focus on enhancing germanium device performance for infrared applications.
Joonas Isometsä has been involved in research supported by the Academy of Finland project "Superior IR imaging via hydrogenated germanium nanostructures (HydroGer)", as highlighted in media and social outreach. While no formal scientific awards are listed, his work has been presented at multiple international conferences and has received attention in press and social media, including coverage by 14 news outlets and mentions across platforms like X, Facebook, Reddit, and Bluesky.
He has contributed to collaborative research activities and advised on datasets related to porous germanium. He regularly presents at conferences and collaborates extensively within the Electron Physics Group, particularly with Prof. Hele Savin and colleagues. No formal students are listed, but his role includes mentoring through collaborative research.
His work is closely tied to the Electron Physics Group at Aalto University, where he contributes to advancing germanium-based technologies for next-generation infrared imaging and optoelectronic applications. The group focuses on nanostructuring, surface passivation, and novel fabrication techniques to overcome traditional limitations in semiconductor performance.
