معرفی
John David is a Professor of Semiconductor Materials and Devices at the University of Sheffield's School of Electrical and Electronic Engineering. He holds a Personal Chair and served as Head of Department (2009–2013). His expertise spans semiconductor materials, particularly III-V compounds with Bismuth, and avalanche photodiodes. He earned his BEng (1979) and PhD (1983) in Electronic Engineering from the University of Sheffield. His research focuses on semiconductor characterization, impact ionization, and high-speed optical devices. He is a Fellow of the IEEE and IET, and previously held the IEEE LEOS Distinguished Lecturer role (2002–2004).
Research Interests: Characterization of III-V semiconductors (GaAsBi), avalanche photodiodes (APDs), impact ionization, and high-speed telecommunication applications. Techniques include X-ray diffraction, photoluminescence, and modeling.
Key Achievements: Developed APDs with low excess noise and high sensitivity, studied Bismuth's role in extending optical structures' wavelength. His work bridges theory and experiment, addressing carrier dynamics under high electric fields.
Professional Activities: Involved in academic leadership and semiconductor research collaborations. His groups include the Advanced Detector Centre and Bismide Semiconductors.
