معرفی
Dr. Ganesh Balakrishnan is a Professor in the Department of Electrical and Computer Engineering at the University of New Mexico (UNM), part of the School of Engineering. His research focuses on III-Sb compound semiconductors, molecular beam epitaxy (MBE), and optoelectronic devices. He leads the Center for High Tech Materials and has contributed over 60 peer-reviewed publications, 30 conference presentations, and multiple patents. His work emphasizes low-defect epitaxy for advanced semiconductor integration.
Education: PhD in Optical Science and Engineering (UNM, 2006), MS in Electrical Engineering (University of Toledo, 2001), and BS in Electronics and Communications Engineering (University of Madras, 2000).
Research interests include mismatched semiconductor epitaxy, narrow-gap devices, and photovoltaic systems. His recent studies address high-brightness photonic crystal surface-emitting lasers (PCSELs), quantum dot-based single-photon emitters, and radiation-resistant materials. He collaborates on metamorphic substrates and semiconductor membranes for electromagnetic interference shielding.
Dr. Balakrishnan’s lab, the Center for High Tech Materials, focuses on advanced semiconductor fabrication and device applications. His work bridges materials science, photonics, and optoelectronics, with applications in defense, energy, and space technologies.
