معرفی
Joonas Hilska is a Researcher in the Department of Physics at Tampere University, specializing in semiconductor materials and optoelectronics. His work focuses on molecular beam epitaxy (MBE), quantum structures, and advanced semiconductor light sources. Key research areas include GaSb-based materials, quantum well structures, and defect engineering in semiconductor interfaces.
Education:
- Master of Science (Technology) in Science and Engineering (2016)
- Bachelor of Science (Technology) in Science and Engineering (2015)
Research Interests: Joonas explores semiconductor materials like GaSb and GaAsBi, emphasizing epitaxial growth techniques and their applications in optoelectronic devices. His recent work includes metamorphic GaSbBi films, antisite defect detection at interfaces, and hybrid integrated lasers emitting in mid-infrared wavelengths.
Collaborations: Active collaborations in material science and photonics, with a focus on semiconductor interfaces and device fabrication.
