Dominique VIGNAUD

Dominique VIGNAUD is a researcher at the Institute of Electronics and Microelectronics of the North (IEMN), affiliated with the University of Science and Technology of Lille (CNRS-Université des Sciences et Techniques de Lille). He joined the CNRS in 1983 and moved to the IEMN epitaxy group in 2000. His work focuses on advanced semiconductor materials and epitaxial growth techniques.

• PhD in Solid-State Physics (1983, Lille University)
• French 'Thèse d’État' (1989, Lille University)
• Postdoctoral research at MIT's Research Laboratory for Electronics (1990-1991)

Research interests include:

• Molecular beam epitaxy (MBE) of semiconductor materials
• Graphene and hexagonal boron nitride (h-BN) growth
• Optical properties of nanostructured materials
• Characterization of heterostructures and quantum wells
• Ion beam implantation and defect studies

He has contributed to studies on photoluminescence, electron lifetime measurements, band offset analysis, and thermal management in III-V semiconductors. Active in the EPIPHY research group, he collaborates on projects involving GaInP/GaInAlP heterostructures, InAs quantum dots, and metamorphic buffer layers.