Dominique Bougeard

Professor Dominique Bougeard leads the Bougeard Group (AG Bougeard) at the University of Regensburg's Faculty of Physics, where he serves as a Professor in the Institute for Experimental and Applied Physics. His research focuses on epitaxial nanostructures and semiconductor heterostructures, with particular emphasis on quantum phenomena in nanoscale systems.

• Faculty of Physics, University of Regensburg
• Institute for Experimental and Applied Physics
• Room PHY 7.1.01
• Tel. +49 941 943-2073
• dominique.bougeard@ur.de

Professor Bougeard's research interests include:

• Development of band-engineered semiconductor systems using molecular beam epitaxy (MBE) in silicon-germanium, arsenides, and antimonides
• Quantum nanostructures for spin qubit applications in silicon and germanium
• Electrical control of spin qubits and spin-orbit effects in semiconductors
• Nanophotonics and lasing in quantum wires
• Proximity effects at interfaces between semiconductors and superconductors

His recent publications demonstrate a strong focus on quantum computing technologies, particularly spin qubits in silicon-germanium systems, with significant contributions to understanding quantum transport, spin dynamics, and light-matter interactions in nanostructures. His work spans both fundamental physics and potential applications in quantum information processing.

Professor Bougeard actively supervises doctoral and master's students, with current advisees including Pauline Drexler, Nadine Mundigl, Rudolf Richter, Lukas Rupp, and Jakob Walsh. His group also includes technical staff and several master's students working on various aspects of semiconductor nanostructures.

The Bougeard Group maintains state-of-the-art facilities for molecular beam epitaxy and characterization of semiconductor nanostructures, enabling precise control of material properties at the atomic level.