Charles Renard

Charles Renard is a CNRS Researcher (CRCN) at the Centre de Nanosciences et de Nanotechnologies (C2N), a joint research unit of Université Paris-Saclay and CNRS. He has led the SEEDs team since 2012, specializing in epitaxial growth techniques for semiconductor materials and nanostructure development, with significant contributions to Quantum Cascade Lasers and hybrid silicon integration.

Dr. Renard earned his Ph.D. in Materials Sciences from Denis Diderot University, Paris (2005), conducting doctoral research at Alcatel-Thales III-V Lab on antimonide/arsenide heterostructures for mid-infrared optoelectronics. His postdoctoral work included UHV-CVD nanostructure growth at IEF Orsay (2006-2007) and III-V/GeOI integration at IMEC Belgium (2008).

His research focuses on Selective Epitaxy, Real-time Monitoring of Nanostructure Growth, and Advanced heterostructure epitaxy, with expertise in IV-IV/III-V material growth on silicon substrates. Since 2019, he has pioneered in situ CVD growth within TEM for nanoscale observation, advancing real-time monitoring capabilities in semiconductor fabrication.

Dr. Renard actively contributes to major initiatives including FET OPEN OPTOSILICON, ANR HEXSIGE, and ANR HELLO_PV projects targeting silicon photonics and photovoltaics. He has authored over 50 peer-reviewed publications, holds 4 patents, and delivered 10 invited talks while developing instrumental infrastructure for the EQUIPEX TEMPOS NANOMAX project's gas injection systems and toxic effluent treatment.