معرفی
Dr. Andrew Marshall is a Senior Lecturer in the Physics Department at Lancaster University, specializing in novel semiconductor materials and devices for optoelectronic applications. He is affiliated with multiple research centers including the Quantum Technology Centre, Security Lancaster (Networks), and Quantum Nanotechnology.
Dr. Marshall's research focuses on the development of novel materials and structures for next generation electronic devices, particularly photodetectors, solar cells, and thermophotovoltaics. His work centers on mismatched growth of GaSb and InAs based materials with atomically abrupt interfaces on GaAs and Silicon substrates. He investigates the properties of novel hetero-lattice interfaces and develops micro and nanoscale fabrication techniques for new devices using state-of-the-art facilities at the Lancaster Quantum Technology Centre.
His recent publications demonstrate a strong focus on mid-infrared technologies, with particular emphasis on quantum structures like quantum wells, quantum rings, and superlattices. His research spans materials growth (MBE, MOCVD), device fabrication, and characterization of optoelectronic properties, with applications in sensing, energy conversion, and communications.
- Royal Academy of Engineering / EPSRC Research Fellowship (2010) - Exploiting Emerging Interface Misfit Epitaxy
- EPSRC Grant - InAsNSb Dilute Nitride Materials for Mid-infrared Devices and Applications
Dr. Marshall supervises 10 postgraduate research students and collaborates extensively with industry partners. His industrial experience includes working at Ford and Visteon, where he led a $100 million program before returning to academia. He serves as a reviewer for IEEE and AIP journals and teaches second-year laboratories and fourth-year MPhys projects. His work bridges fundamental materials science with practical applications through strong industry partnerships.
Dr. Marshall's research is conducted primarily within the Lancaster Quantum Technology Centre, where he utilizes advanced micro and nanofabrication facilities to develop next-generation semiconductor devices. His team focuses on integrating III-V semiconductor materials with silicon substrates, enabling new applications in infrared detection, sensing, and energy conversion.
