Shyh-Chiang Shen is a Full Professor in the School of Electrical and Computer Engineering at the Georgia Institute of Technology. He holds affiliations with the Institute of Electronics and Nanotechnology (IEN), the Center for Compound Semiconductors (CCS), the Package Research Center (PRC), and the Georgia Electronic Design Center (GEDC). His research focuses on wide-bandgap semiconductor (WBG) technologies, particularly III-nitride devices for optoelectronics and power electronics. Dr. Shen earned his B.S. and M.S. in Electrical Engineering from National Taiwan University (1993–1995) and his Ph.D. from the University of Illinois at Urbana-Champaign (UIUC) in 2001. His career includes roles at Xindium Technologies (2000–2004) developing InP-based optoelectronic integrated circuits and GaAs MESFETs. At Georgia Tech since 2005, he leads the Semiconductor Research Laboratory (SRL), where his team advances GaN-based power electronics and UV optoelectronics. His research interests span high-sensitivity UV photodetectors, III-nitride coherent light emitters, high-power GaN transistors, and GaN-based integrated circuits. Key projects include first demonstrations of GaN HBTs, Geiger-mode UV APDs, and monolithically integrated 40 Gb/s optical receivers. Dr. Shen’s work has yielded 8 U.S. patents, over 170 refereed publications, and 5 book chapters. His scientific awards include the 2010 Richard M. Bass Outstanding Teacher Award (Georgia Tech senior class vote), 2011 Outstanding Junior Faculty Award, and 2012 Undergraduate Research Mentor Award. He is an OSA Fellow and IEEE Senior Member. His lab, BH 256, features a class-1,000 cleanroom with advanced equipment (e.g., e-beam evaporator, contact aligner, rapid thermal annealing). Collaborations with material growth groups aim to bridge research and commercial applications in III-N devices for power electronics and optoelectronics.








