Dimitrios Skarlatos

Dimitrios Skarlatos is a Professor in the Department of Physics at the University of Patras, specializing in Micro-Nanoelectronics and Semiconductor Physics with applications in Microelectronics. His academic career spans over two decades, with progressive appointments from Assistant Professor to his current position as full Professor since August 2023. He maintains extensive research collaborations with institutions including EKETE Demokritos, international universities, and semiconductor research centers across Europe.

Skarlatos earned his Doctoral Degree from the Department of Physics of the School of Sciences at Aristotle University of Thessaloniki in 2000, with a thesis on "The role of point and extended silicon defects in the operation of MOS transistors." Prior to this, he completed a Postgraduate Diploma in Condensed Matter Physics from the University of Crete (1993) and his undergraduate degree in Physics from the University of Athens (1990).

His research focuses on Group IV semiconductor materials (Silicon, Strained Silicon, Germanium) for CMOS technology applications. Key areas include experimental study of extended defects, ion implantation and dopant diffusion/activation, MOS gate dielectric development, and novel memory device architectures (nanocrystal memories, MANOS, ReRAM). His work combines advanced cleanroom processing techniques with electrical characterization and simulation methods.

Analysis of his recent publications reveals a strong focus on germanium-based semiconductor devices, with particular attention to dopant behavior, interface engineering, and memory applications. His research has evolved from traditional silicon processing to emerging germanium technologies and novel memory architectures, demonstrating consistent innovation in semiconductor materials science.

Skarlatos has supervised 3 completed doctoral dissertations (with 1 in progress), 5 postgraduate theses, and 12 undergraduate theses. He has led multiple research projects including EU-funded initiatives (ESPRIT, GROWTH, IST) and national research programs (GGTE, HERACLES II), focusing on semiconductor front-end processes, memory technologies, and solar cell applications.

His laboratory work involves advanced cleanroom processing (ALD, thermal processing, optical lithography), electrical characterization (C-V, G-V, I-V), and collaboration with TEM facilities. He maintains strong connections with semiconductor research centers including CEMES/CNRS in Toulouse and has extensive experience with TCAD simulation tools.