Tim Holman

Tim Holman is a Research Associate Professor in the Department of Electrical Engineering at Vanderbilt University's School of Engineering. His research focuses on low-power/low-voltage analog/mixed-signal IC design and radiation-tolerant circuit design, addressing challenges such as single-event transients and radiation hardening. He holds a Ph.D. and M.S. from Georgia Institute of Technology and a B.S. from the University of Tennessee.

His work spans advanced semiconductor technologies, including FinFETs and SOI processes, with applications in space electronics and reliable circuit design. Notable contributions include radiation-hardened ADCs for planetary missions and mitigation techniques for transient errors in digital circuits. Holman has collaborated on educational initiatives, such as integrating cubesat projects into undergraduate curricula to enhance hands-on learning.

His publications emphasize radiation effects in nanoscale ICs, with a focus on improving reliability through design methodologies like dual-interlocked logic and node-splitting techniques. He has contributed to both theoretical and experimental advancements in analog/mixed-signal circuit reliability under extreme conditions.