Saptarsi Ghosh

Dr. Saptarsi Ghosh is a Lecturer in the Electronic and Electrical Engineering department at Swansea University, joining in early 2024. Prior to this, he was a Postdoctoral Researcher at the University of Cambridge and earned his PhD from IIT Kharagpur. His research bridges electrical engineering and applied physics, focusing on improving power electronics efficiency and developing quantum 2.0 devices using wide-bandgap semiconductors like GaN and Ga₂O₃. His work utilizes advanced tools for epitaxial growth, material characterization, and lithography, with a focus on optimizing semiconductor growth and understanding defects' impact on device performance.

Based at the £50M Center for Integrative Semiconductor Materials (CISM), his research leverages cutting-edge experimental facilities and collaborations within the South Wales semiconductor cluster and globally. He is an active IEEE member since 2014 and peer reviewer for top-tier journals.

Research Interests: Wide-bandgap electronics, heterostructure design for RF/power devices, transistor reliability, compound semiconductor growth (MOCVD/MBE), nanoscale structure-property relationships, and quantum transport.

Teaching: Solid-state devices, microelectronic circuits, semiconductor characterization, and electromagnetism. He teaches modules like EG-240 (Electronic Circuits), EG-252 (Group Design Exercise), and EGA223 (Electronic Circuits Laboratory).

Publications: Over 20 peer-reviewed articles in journals like Journal of Applied Physics, Applied Physics Letters, and ACS Photonics, emphasizing GaN-based devices, nanomaterials, and optoelectronics. Recent work includes porous GaN reflectors, quantum emitters, and transistor characterization.

Engagement: Outreach activities under Dr. Mohammad Monfared, Royce Discover Materials Ambassador, and national materials workshops demonstrations.