Martin Bygdås

Martin Bygdås is a Doctoral Research Fellow at the Faculty of Mathematics and Natural Sciences, University of Oslo. His research focuses on point defects in semiconductors for quantum technology applications, particularly single-photon emitters in Aluminium nitride (AlN), using Density Functional Theory (DFT).

Education:

• M.Sc. in Applied Physics and Mathematics (2019-2024), specializing in Applied Physics at NTNU
• Master Thesis: "Electronic Structure of the Topological Material Bi₂Se₃ in selected Nanoscale Configurations"

Research Projects:

• Quantum emitters in semiconductors for future Technologies
• Single-photon emitters (QuTe 2.0)

Research Groups:

• Solid-state Physics and Quantum Technology