معرفی
Dr Ian Farrer is a Visiting Professor at the University of Sheffield's School of Electrical and Electronic Engineering, affiliated with the Semiconductor Materials and Devices Research Group and the National Epitaxy Facility. He holds a PhD and MSci in Physics from the University of Cambridge. His research focuses on molecular beam epitaxy (MBE), quantum dot growth, and high-purity semiconductor materials for quantum technologies. Notable contributions include pioneering work on electrically driven entangled photon LEDs and quantum teleportation demonstrations. He has published over 370 papers (h-index 45) and leads the UK MBE annual meeting.
His expertise spans quantum cryptography, ultra-high mobility GaAs/AlGaAs materials, and novel materials like Zinc Nitride and transition metal dichalcogenides. He employs advanced optical monitoring techniques (reflectivity, band edge thermometry) and X-ray diffraction for thin film analysis. Current projects include site-controlled quantum dot growth using DCA Epitaxy Cluster Tools and hybrid superconducting-semiconducting quantum devices.
He previously served as Lecturer and Senior Lecturer at Sheffield until 2025, and currently holds a role as Senior Crystal Growth Expert at Quantum Foundry in Copenhagen, focusing on quantum chip manufacturing. His work bridges academia and industry, emphasizing scalable quantum technologies and epitaxial innovation.
